发明名称 High-frequency module
摘要 A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member, a semiconductor device mounted on an upper face of the upper substrate, a first ground line connected to the semiconductor device and formed on the upper substrate, and a ground metal part connected to the base metal part and disposed in the lower base member, wherein the ground metal part is connected to the first ground line on the upper substrate.
申请公布号 US9287224(B2) 申请公布日期 2016.03.15
申请号 US201314090560 申请日期 2013.11.26
申请人 FUJITSU LIMITED 发明人 Masuda Satoshi
分类号 H01L23/34;H01L23/66;H01L25/16;H01L23/045;H01L23/047;H01L23/498;H05K3/46;H05K7/20;H01L23/00;H01L23/367;H05K1/02;H05K9/00 主分类号 H01L23/34
代理机构 Fujitsu Patent Center 代理人 Fujitsu Patent Center
主权项 1. A high-frequency module, comprising: a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded; an upper substrate disposed inside the recess part of the lower base member; a semiconductor device mounted on an upper face of the upper substrate; a first ground line connected to the semiconductor device and formed on the upper substrate; and a ground metal part connected to the base metal part and disposed in the lower base member, wherein the ground metal part is made of material containing copper and is connected to the first ground line on the upper substrate.
地址 Kawasaki JP