Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation

摘要

In sophisticated semiconductor devices, electronic fuses may be provided in the metallization system, wherein a superior two-dimensional configuration of the metal line, for instance as a helix-like configuration, may provide superior thermal conditions in a central line portion, which in turn may result in a more pronounced electromigration effect for a given programming current. Consequently, the size of the electronic fuse, at least in one lateral direction, and also the width of corresponding transistors connected to the electronic fuse, may be reduced.

主权项

1. A semiconductor device, comprising:
a metallization system comprising a first metallization layer and a second metallization layer positioned above said first metallization layer; a first metal line positioned in said first metallization layer; a second non-linear metal line positioned in said second metallization layer; and a cathode via positioned in said second metallization layer and connecting said second non-linear metal line with said first metal line, said cathode via being positioned so as to be laterally offset from said second non-linear metal line along two orthogonal lateral directions by substantially the same amount, said cathode via and said second non-linear metal line forming a fuse body of an electronic fuse.