Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same

摘要

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a first fin structure overlying a first type region in a semiconductor substrate and forming a second fin structure overlying a second type region in the semiconductor substrate. A gate is formed overlying each fin structure and defines a channel region in each fin structure. The method includes masking the second type region and etching the first fin structure around the gate in the first fin structure to expose the channel region in the first fin structure. Further, the method includes doping the channel region in the first fin structure, and forming source/drain regions of the first fin structure around the channel region in the first fin structure.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
forming a first fin structure overlying a first type region in a semiconductor substrate and forming a second fin structure overlying a second type region in the semiconductor substrate; forming a gate overlying each fin structure and defining a channel region in each fin structure; masking the second type region; etching the first fin structure using the gate as an etch mask in the first fin structure to expose the channel region in the first fin structure; doping the channel region in the first fin structure; and forming source/drain regions of the first fin structure around the channel region in the first fin structure.