Pre-patterned hard mask for ultrafast lithographic imaging

摘要

A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.

主权项

1. An intermediate for use in a method of fabricating a substrate, comprising:
a substrate; a hardmask layer on said substrate; and a cross grating formed on said hardmask layer, said cross grating comprising a first patterned layer and a second patterned layer; wherein:
said first patterned layer is present on said hardmask layer;said second patterned layer is on said first patterned layer; andsaid first and second patterned layers intersect to form regions in which least a portion of said hardmask layer is exposed.