Semiconductor light-emitting device, super luminescent diode, and projector

摘要

A semiconductor light-emitting device includes: a stacked structure including a light-emitting layer, a first cladding layer, and a second cladding layer; a first electrode electrically connected with the first cladding layer; a second electrode electrically connected with the second cladding layer; and a third electrode electrically connected with the second cladding layer. The stacked structure includes an optical waveguide. The optical waveguide includes a straight waveguide portion extending from a light exiting portion along a straight line inclined to a normal of a front edge surface of the stacked structure, and a curved waveguide portion including a curved waveguide having a shape with a curvature. The density of current injected into the straight waveguide portion is higher than that of current injected into the curved waveguide portion.

主权项

1. A semiconductor light-emitting device comprising:
a stacked structure including a light-emitting layer, a first cladding layer, and a second cladding layer, the first cladding layer and the second cladding layer interposing the light-emitting layer therebetween; a first electrode electrically connected with the first cladding layer; a second electrode electrically connected with the second cladding layer; and a third electrode electrically connected with the second cladding layer and arranged at a position different from that at which the second electrode is arranged, wherein the stacked structure includes an optical waveguide, the optical waveguide includes
a straight waveguide portion extending from a light exiting portion along a straight line inclined to a normal of a front edge surface of the stacked structure, the light exiting portion being disposed on the front edge surface of the stacked structure, anda curved waveguide portion continuous with the straight waveguide portion and including a curved waveguide having a shape with a curvature, and the density of current injected into the straight waveguide portion located between the first electrode and the second electrode is higher than that of current injected into the curved waveguide portion located between the first electrode and the third electrode.