CORRECTION OF SHORT-RANGE DISLOCATIONS IN A MULTI-BEAM WRITER

摘要

The present invention discloses a method for calculating an exposure pattern to expose a desired pattern on a target inside a charge carrier lithography device. The method includes the following steps: (i) subdividing an exposed area into sub areas which do not overlap each other; (ii) determining sub area dislocations for each of the sub areas; (iii) providing the desired pattern on the exposed area on the target by using a graphic expression; (iv) revising the graphic expression in accordance with the sub area dislocations; and (v) calculating an exposure pattern formed on a plurality of pixels from the revised graphic expression.