| 摘要 |
The present invention relates to a semiconductor memory device and a method for manufacturing the same. The semiconductor memory device according to the present invention includes: a stacked structure including conductive patterns and interlayer insulation patterns which are alternately stacked; a through-hole for penetrating the stacked structure; a channel pattern which is formed inside the through-hole; a first capping conductive pattern which is formed on the channel pattern; a second capping conductive pattern which is formed on a side wall of the first capping conductive pattern to surround the first capping conductive pattern; and a contact plug which is formed on the first capping conductive pattern and the second capping conductive pattern. The present invention provides the semiconductor memory device capable of improving margin of a contact connected to a vertical channel of a three-dimensional semiconductor memory device, and the method for manufacturing the same. |
