| 摘要 |
The present invention relates to a method for manufacturing a nitride semiconductor substrate to prevent bending of a substrate due to a temperature change and cracks. The method includes a step of forming a SiGe thin film on a Si substrate, a step of forming a SiGe thin film on the silicon substrate by performing a high temperature oxidation process on the Si substrate having the SiGe thin film, forming a Ge rich layer on the SiGe thin film, and forming a silicon oxide (SiO_2) layer on the Ge rich layer, a step of removing the silicon oxide layer, and a step of growing a semiconductor layer on the Ge rich layer. |
