FIELD EFFECT TRANSISTOR INCLUDING RECTANGULAR NANOSHEET AND METHOD OF FABRICATING THEREOF

摘要

Provided are a method for fabricating a nanosheet structure and a field-effect transistor (FET) including the same. The method for fabricating a nanosheet structure, comprises: selecting an active material that will serve as a channel material in the nanosheet structure, a substrate suitable for epitaxial growth of the active material, and a sacrificial material to be used during fabrication of the nanosheet structure; growing a stack of alternating layers of active and sacrificial materials over the substrate; and selectively etching the sacrificial material, wherein due to the properties of the sacrificial material, the selective etch results in remaining layers of active material having an aspect ratio greater than 1 and the same thickness and atomic smoothness along the entire cross-sectional width of each active material layer perpendicular to current flow.