BONDING WIRE FOR SEMICONDUCTOR DEVICE USE AND METHOD OF PRODUCTION OF SAME

摘要

A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 mm[sup]2[/sup] or more; (2) at least 10 pcnt but less than 50 pcnt of the area of the wire-center cross-section exhibits a crystal orientation of [100] within 15o of the lengthwise direction of the wire; and (3) at least 70 pcnt of the area of the surface of the wire exhibits a crystal orientation of [100] within 15o of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5 pcnt is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges.