发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME |
摘要 |
A thin film transistor substrate comprises a base substrate and a thin film transistor. The base substrate comprises a gate line extended in a first direction and a data line extended in a second direction crossing the first direction. The thin film transistor comprises: a gate electrode connected to the gate line and the data line and arranged on the base substrate; a semiconductor pattern overlapping the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern and separated from each other. The source electrode comprises: a first source layer; a second source layer arranged on the first source layer; and a first dispersion prevention layer arranged between the first and the second source layer. The drain electrode comprises: a first drain layer; a second drain layer arranged on the first drain layer; and a second dispersion prevention layer arranged between the first and the second drain layer. Therefore, electrical characteristics of the thin film transistor can be improved to improve reliability of a display panel. |
申请公布号 |
KR20160028074(A) |
申请公布日期 |
2016.03.11 |
申请号 |
KR20140116386 |
申请日期 |
2014.09.02 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KANG, HYUN JU;SOHN, SANG WOO;SHIN, SANG WON;JEONG, CHANG OH |
分类号 |
H01L29/786;G02F1/1335;G02F1/1368 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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