ETCHING COMPOSITION FOR SILICON OXIDE AND SILICON NITRIDE

摘要

The present invention relates to an etchant useful in simultaneous etching of a silicon oxide film and a silicon nitride film. The etchant according to the present invention comprises a fluorine compound, a saturated amine compound including two or more nitrogen atoms, and water. The difference in etching speed of a silicon oxide film and a silicon nitride film can be reduced for uniform etching, and the excellent profile not causing undercut of the silicon oxide film when forming a pattern of an insulation film can be formed as the result.