| 摘要 |
The present technology is to provide an image sensor comprising a phase difference detection pixel which can prevent the quantity of a signal inputted from the outside from being reduced. The image sensor includes: a photoelectric conversion layer; and a pixel lens including a plurality of light collecting layers where an upper layer has a narrower linewidth than a lower layer as formed on an upper part of the photoelectric conversion layer. Each light collecting layer can have a form where side walls of one side are aligned to each other in the pixel lens. |
