| 发明名称 |
MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES |
| 摘要 |
A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer. |
| 申请公布号 |
US2016072043(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201414483104 |
申请日期 |
2014.09.10 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
PARK Chando;LEE Kangho;KAN Jimmy;Gottwald Matthias Georg;ZHU Xiaochun;KANG Seung Hyuk |
| 分类号 |
H01L43/02;H01L43/10;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A magnetic tunnel junction (MTJ) device, comprising:
a pinned layer; a tunnel barrier layer on the pinned layer; a free layer on the tunnel barrier layer; a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer; a capping layer on the PMA enhancement layer; and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. |
| 地址 |
San Diego CA US |
