Semiconductor Switch with Integrated Temperature Sensor

摘要

A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in the semiconductor body. The field effect transistor has a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body. A first circuit is integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit is integrated in the semiconductor body remote from the first circuit. A first additional trench is formed in the semiconductor body and includes at least one connecting line which electrically connects the first circuit and the second circuit. The semiconductor device also includes at least one conductive pad formed in the at least one wiring layer. The at least one conductive pad is arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.

主权项

1. A semiconductor device, comprising:
a semiconductor body; at least one wiring layer disposed on the semiconductor body; a field effect transistor integrated in the semiconductor body, the field effect transistor having a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body; a temperature sensor integrated in the semiconductor body adjacent to the field effect transistor; a temperature sense circuit integrated in the semiconductor body and remote from the temperature sensor; a first additional trench formed in the semiconductor body, the first additional trench including at least one sense line which electrically connects the temperature sensor and the temperature sense circuit; and at least one conductive pad formed in the at least one wiring layer, the at least one conductive pad being arranged to at least partially cover the first additional trench to form a shielding of the at least one sense line.