| 摘要 |
In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) comprising a top side (2), a bottom side (3) diametrically opposite the top side (2), and an active layer (11) for generating electromagnetic radiation at a first wavelength (10), wherein the semiconductor chip (100) is free of a growth substrate for the semiconductor chip layer sequence (1). The semiconductor chip (100) further comprises a plurality of contact elements (30) which are arranged on the bottom side (3) and can be electronically controlled individually and independently from each other. The semiconductor layer sequence (1) is thereby divided into a plurality of emission regions (20) which are arranged laterally adjacent to one another and are constructed for the purpose of emitting radiation during operation. One of the contact elements (30) is thereby assigned to each emission region (20). Each emission region (20) further comprises a recess in the semiconductor layer sequence (1) which extends from the top side (2) in the direction of the active layer (11). In a top view of the top side (2), the recess of each emission region (20) is completely surrounded by a continuous path made of separating walls (21), wherein the separating walls (21) are formed from the semiconductor layer sequence (1). |
