| 摘要 |
PROBLEM TO BE SOLVED: To provide a lead zirconate titanate (PZT) material having peculiar characteristics and applicability to a PZT thin film capacitor, for example, applicability to a ferroelectric capacitor structure, such as FeRAMs.SOLUTION: The PZT material is scalable, namely, dimensionally scalable, scalable in a pulse length and/or scalable in an electric field in the characteristics, and is useful for, for example, a ferroelectric capacitor over a wide range of thickness of approximately 20-150 nm and a range of lateral size lowly extended to 0.15 μm. The scalable PZT material is formed by a liquid supply MOCVD without a PZT film modification technique, such as, for example, a material acceptor dopant of Nb, Ta, La, Sr, Ca, etc., or a film modification agent.SELECTED DRAWING: Figure 2 |
