COMPLEMENTARY METAL OXIDE SEMICONDUCTOR RADIO FREQUENCY POWER AMPLIFIERS WITH HIGH LINEARITY ACROSS A WIDE RANGE OF BURST SIGNALS IN WIFI APPLICATIONS

摘要

An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A minor transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.

主权项

1. A radio frequency (RF) power amplifier circuit, comprising:
a power amplifier including a power amplifier output and an RF signal input; a control circuit selectively biasing the power amplifier, the control circuit including:
an auxiliary current source;a ramp-up capacitor connected to the auxiliary current source;a ramp-up switch connected to the auxiliary current source, the ramp up switch selectively activating the auxiliary current source and charging the ramp-up capacitor in response to a control signal corresponding to an RF signal burst;a buffer including an output and an input connected to the ramp-up capacitor, voltage at the input of the buffer being linearly dependent over an RF signal burst duration; anda main current source connected to the output of the buffer at a sum node;wherein the sum node is connected to the power amplifier.