| 发明名称 |
THREE-DIMENSIONAL STRUCTURED MEMORY DEVICES |
| 摘要 |
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region. |
| 申请公布号 |
US2016071880(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514942533 |
申请日期 |
2015.11.16 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Lee Ki Hong;Pyi Seung Ho;Kwon Il Young;Bin Jin Ho |
| 分类号 |
H01L27/115;H01L21/02;H01L21/265;H01L29/08 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A three-dimensional structured memory device, comprising:
a source/drain region; a n+ region formed at the source/drain region; a p+ region formed at the source/drain region; and a diffusion barrier material formed between the n+ region and the p+ region, the n+ region being substantially isolated from the p+ region. |
| 地址 |
Boise ID US |
