| 发明名称 |
FERROELECTRIC MEMORY DEVICE |
| 摘要 |
The invention relates to a ferroelectric memory device comprising at least one layer comprising a ferroelectric polymer, and at least two electrodes either side thereof, the ferroelectric polymer being of general formula P(VDF-X-Y), wherein VDF is vinylidene fluoride motifs, X is trifluoroethylene or tetrafluoroethylene motifs, and Y is motifs from a third monomer, the molar proportion of Y motifs in the polymer being less than or equal to 6.5%. |
| 申请公布号 |
US2016071852(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201414785544 |
申请日期 |
2014.04.16 |
| 申请人 |
ARKEMA FRANCE |
发明人 |
DOMINGUES DOS SANTOS Fabrice;LANNUZEL Thierry |
| 分类号 |
H01L27/115;H01L29/78;H01L29/51;H01L51/05 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A ferroelectric memory device comprising at least one layer which comprises a ferroelectric polymer and at least two electrodes on either side of this layer, the ferroelectric polymer being of general formula P(VDF-X-Y), in which VDF represents vinylidene fluoride units, X represents trifluoroethylene or tetrafluoroethylene units and Y represents units resulting from a third monomer, the molar proportion of Y units in the polymer being less than or equal to 6.5%. |
| 地址 |
Colombes FR |
