发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT |
摘要 |
An electrostatic discharge (ESD) protection circuit includes a substrate, a semiconductor layer provided on the substrate to have a first conductivity type, a first well provided in a first region of the semiconductor layer to have a second conductivity type, an insulating pattern provided in the first well to cross the first well, and first and second doped regions provided in an upper portion of the first well to have the first conductivity type. The first and second doped regions may be laterally spaced apart from each other with the insulating pattern interposed therebetween. |
申请公布号 |
US2016071832(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514674559 |
申请日期 |
2015.03.31 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YOO JAE-HYUN |
分类号 |
H01L27/02;H01L29/866;H01L29/08;H01L29/732;H01L29/10;H01L27/06;H01L29/735 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. An electrostatic discharge (ESD) protection circuit, comprising:
a substrate; a semiconductor layer covering a top surface of the substrate and having a first conductivity type; a first well in a first region of the semiconductor layer, the first well having a second conductivity type different from the first conductivity type and extending downwardly from a top surface of the semiconductor layer; an insulating pattern crossing the first well on the first well; and a first doped region and a second doped region provided in an upper portion of the first well, the first and second doped regions having the first conductivity type, wherein the first and second doped regions are laterally spaced apart from each other with the insulating pattern interposed therebetween. |
地址 |
Suwon-si KR |