SEMICONDUCTOR DEVICE ETCHING FOR RC DELAY IMPROVEMENT

摘要

In an etching method for fabricating a semiconductor device, at first, a semiconductor substrate including a contact region is provided. Then, a metallic nitride layer is formed on the semiconductor substrate to prevent over-etching. Thereafter, a dielectric layer is formed on the metallic nitride layer. Then, an etching process is performed to form an opening passing through the metallic nitride layer and the dielectric layer to expose the contact region. The etching method may further include forming a diffusion barrier layer between the metallic nitride layer and the semiconductor substrate to prevent diffusion of a material of the contact region.

主权项

1. An etching method, the method comprising:
providing a semiconductor substrate comprising a contact region; forming a metallic nitride layer on the semiconductor substrate; forming a dielectric layer on the metallic nitride layer; and performing an etching process to form an opening passing through the dielectric layer and the metallic nitride layer to expose the contact region.