发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
申请公布号 US2016071747(A1) 申请公布日期 2016.03.10
申请号 US201514940186 申请日期 2015.11.13
申请人 Kabushiki Kaisha Toshiba 发明人 Uozumi Yoshihiro;Kimura Shinsuke;Ogawa Yoshihiro;limori Hiroyasu;Koide Tatsuhiko;Hirabayashi Hideaki;Nagashima Yuji
分类号 H01L21/67;H01L21/68;H01L21/677 主分类号 H01L21/67
代理机构 代理人
主权项
地址 Tokyo JP