| 主权项 |
1. A shield member which is placed between a raw material storage part and a substrate supporting part in an apparatus for growing a single crystal and is placed apart from a raw material held in the raw material storage part,
the apparatus comprising: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing a crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, wherein the shield member consists of a single member, a plurality of permeation holes through which the raw material gas passes is formed, and the shield member is configured such that the thickness of the shield member increases from the center to the outer periphery and the shield member has the heat capacity which increases from the center to the outer periphery due to the configuration. |
