| 发明名称 |
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME |
| 摘要 |
A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution. |
| 申请公布号 |
US2016068993(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514824811 |
申请日期 |
2015.08.12 |
| 申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SHIRAI Takayuki |
| 分类号 |
C30B19/10;C30B19/06;H01L29/04;C30B19/12;C30B29/36;H01L29/16;C30B19/02;C30B19/08 |
主分类号 |
C30B19/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a SiC single crystal wherein a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises:
using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution satisfy the following formula (1):
y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution. |
| 地址 |
Toyota-shi JP |
