发明名称 ZINC OXIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL USING SAME
摘要 Provided is a zinc oxide substrate which contains 0.1% by weight or more of Mg, and which is used for the purpose of growing a group 13 nitride crystal thereon by an MOCVD method. A zinc oxide substrate according to the present invention enables growth of a group 13 nitride crystal having excellent crystallinity on a substrate by an MOCVD method without forming an insulating layer in advance.
申请公布号 WO2016035417(A1) 申请公布日期 2016.03.10
申请号 WO2015JP67290 申请日期 2015.06.16
申请人 NGK INSULATORS, LTD. 发明人 YOSHIKAWA JUN;KURAOKA YOSHITAKA;NAMERIKAWA MASAHIKO;KONDO TAKAYUKI;YOSHINO TAKASHI;NANATAKI TSUTOMU
分类号 C30B29/38;C23C16/34;C30B25/18;H01L21/205 主分类号 C30B29/38
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