发明名称 |
ZINC OXIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL USING SAME |
摘要 |
Provided is a zinc oxide substrate which contains 0.1% by weight or more of Mg, and which is used for the purpose of growing a group 13 nitride crystal thereon by an MOCVD method. A zinc oxide substrate according to the present invention enables growth of a group 13 nitride crystal having excellent crystallinity on a substrate by an MOCVD method without forming an insulating layer in advance. |
申请公布号 |
WO2016035417(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
WO2015JP67290 |
申请日期 |
2015.06.16 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
YOSHIKAWA JUN;KURAOKA YOSHITAKA;NAMERIKAWA MASAHIKO;KONDO TAKAYUKI;YOSHINO TAKASHI;NANATAKI TSUTOMU |
分类号 |
C30B29/38;C23C16/34;C30B25/18;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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