THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME
摘要
Various embodiments disclose a thin film transistor array substrate including at least one thin film transistor and a low resistance line, and a manufacturing method thereof. The thin film transistor includes a semiconductor layer which has a channel region having a first doping concentration on a substrate, a source-drain region which is separated by the channel region and has a second doping concentration higher than the first doping concentration, and a non-doping region extended from the source-drain region; a gate insulating layer formed on the semiconductor layer; a gate electrode which is arranged on the gate insulating layer and is at least partly overlapped with the channel region; and a source electrode and a drain electrode which are insulated from the gate electrode and are electrically connected to the source-drain region. The gate electrode includes a first gate electrode layer and a second gate electrode layer which is thicker than the first gate electrode layer.
申请公布号
KR20160027488(A)
申请公布日期
2016.03.10
申请号
KR20140114515
申请日期
2014.08.29
申请人
SAMSUNG DISPLAY CO., LTD.
发明人
KIM, MYOUNG HWA;KANG, JAE WOOK;JEON, JOO HEE;LEE, JONG CHAN;KHANG, YOON HO