DIRECTED SELF-ASSEMBLY MATERIAL ETCH MASK FOR FORMING VERTICAL NANOWIRES

摘要

A method includes forming at least one fin on a semiconductor substrate. A nanowire material is formed above the fin. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the nanowire material. The nanowire material is etched using the hard mask layer as an etch mask to define a substantially vertical nanowire on a top surface of the at least one fin, wherein at least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material.

主权项

1. A method, comprising:
forming at least one fin on a semiconductor substrate; forming a nanowire material above said at least one fin; forming a hard mask layer above said at least one fin; forming a first directed self-assembly material above said hard mask layer; patterning said hard mask layer using a portion of said first directed self-assembly material as an etch mask to expose a portion of said nanowire material; and etching said nanowire material using said hard mask layer as an etch mask to define a substantially vertical nanowire on a top surface of said at least one fin, wherein at least one dimension of said substantially vertical nanowire is defined by an intrinsic pitch of said first directed self-assembly material.