| 发明名称 |
GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH |
| 摘要 |
A method of performing in-situ cleaning of a substrate includes inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam includes a broad gas cluster ion bean that reaches an entire surface of the substrate. The entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam. |
| 申请公布号 |
US2016071723(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514937968 |
申请日期 |
2015.11.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Gluschenkov Oleg;Ozcan Ahmet S. |
| 分类号 |
H01L21/02;H01L21/3065 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of performing in-situ cleaning of a substrate, the method comprising:
inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam comprises a broad gas cluster ion bean that reaches an entire surface of the substrate, wherein the entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam. |
| 地址 |
Armonk NY US |
