发明名称 ATMOSPHERIC EPITAXIAL DEPOSITION CHAMBER
摘要 Embodiments described herein disclose epitaxial deposition chambers and components thereof. In one embodiment, a chamber can include a substrate support positioned in a processing region, a radiant energy assembly comprising a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates, while maintaining throughput, reducing costs and providing a reliably uniform deposition product.
申请公布号 WO2016036868(A1) 申请公布日期 2016.03.10
申请号 WO2015US48167 申请日期 2015.09.02
申请人 APPLIED MATERIALS, INC. 发明人 LAU, SHU-KWAN;SAMIR, MEHMET TUGRUL;MYO, NYI OO;MILLER, AARON;HUNTER, AARON MUIR;SANCHEZ, ERROL ANTONIO C.;BRILLHART, PAUL;RANISH, JOSEPH M.;SHAH, KARTIK;DEMARS, DENNIS L.;KUPPURAO, SATHEESH
分类号 H01L21/20;H01L21/02 主分类号 H01L21/20
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