SEMICONDUCTOR DEVICE MANUFACTURING METHOD, BONDING MATERIAL AND BONDING MATERIAL FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a bonding material and a bonding material formation method, which can bond metal materials by using a bonding material having an intended solidus temperature.SOLUTION: A semiconductor device manufacturing method comprises the steps of: firstly placing a sheet metal 23 on a porous layer 22b formed on a surface of a surface side metal layer 12 of an insulating substrate 1, in which the sheet metal 23 is composed of a second eutectic alloy which is composed of a second metal forming all proportional solid solution alloy with a first metal, and a third metal forming a first eutectic alloy by eutectic reaction with the first metal at a first eutectic point, and has a second eutectic point lower than the first eutectic point; subsequently placing a semiconductor chip 2 on the sheet metal 23; subsequently melting the sheet metal 23 by a heat treatment at a first temperature higher than the second eutectic point and lower than the first eutectic point to impregnate a porous layer 22b; and subsequently melting the porous layer 22b by a heat treatment at a second temperature higher than the first temperature and causing dispersion of the first metal to a fused material of the sheet metal 23 thereby to form a bonding layer of a ternary alloy of first through third metals.SELECTED DRAWING: Figure 3