发明名称 METHOD AND APPARATUS FOR STORING INFORMATION USING A MEMORY ABLE TO PERFORM BOTH NVM AND DRAM FUNCTIONS
摘要 A memory device is able to store data using both on-chip dynamic random-access memory (“DRAM”) and nonvolatile memory (“NVM”). The memory device, in one aspect, includes NVM cells, word lines (“WLs”), a cell channel, and a DRAM mode select. The NVM cells are capable of retaining information persistently and the WLs are configured to select one of the NVM cells to be accessed. The cell channel, in one embodiment, is configured to interconnect the NVM cells to form a NVM string. The DRAM mode select can temporarily store data in the cell channel when the DRAM mode select is active.
申请公布号 US2016071590(A1) 申请公布日期 2016.03.10
申请号 US201514864741 申请日期 2015.09.24
申请人 NEO Semiconductor, Inc. 发明人 Hsu Fu-Chang
分类号 G11C14/00;G11C11/4096;G11C16/26;G11C16/08;G11C16/04 主分类号 G11C14/00
代理机构 代理人
主权项 1. A memory device able to store information, comprising: a plurality of first nonvolatile memory (“NVM”) cells capable of retaining information persistently; a plurality of first word lines (“WLs”) coupled to the plurality of NVM cells and configured to select one of the plurality of first NVM cells to be accessed; a first cell channel coupled to the plurality of NVM cells and configured to interconnect the plurality of NVM cells to form a first NVM string; and a first dynamic random-access memory (“DRAM”) mode select coupled to the first NVM string and configured to temporarily store data in the first cell channel when the first DRAM mode select is active.
地址 San Jose CA US