NANO-STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nanostructure semiconductor light emitting device for emitting light of a long wavelength according to an embodiment of the present invention includes a base layer made of a first conductivity type nitride semiconductor, and nano light emitting structures which are separated from each other on the base layer. The nano light emitting structure may include a nanocore made of the first conductivity type nitride semiconductor, a stress control layer which is arranged on the surface of the nanocore and has nitride semiconductor containing indium, an active layer arranged on the stress control layer, a second conductivity type nitride semiconductor arranged on the active layer, and a defect blocking layer which is arranged on at least part of the stress control layer and has nitride semiconductor of which the lattice constant is smaller than that of the stress control layer.