| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device, that generate no void at bonding parts even when held under a high temperature, and that can prevent reduction in electrical conductivity and thermal conductivity.SOLUTION: Unevenness is formed on both or one of bonding surfaces to be bonded with each other, and a diffusion prevention layer is formed on the surfaces or the insides of both bonding parts. An insert material is interposed between the bonding parts, and pressure and heat are applied to directly bond a base metal that configures one bonding part and a base metal that configures the other metal bonding part with each other in at least a part of the bonding interface.SELECTED DRAWING: Figure 4 |
