3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME

摘要

A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.

主权项

1. A nonvolatile memory device comprising:
a plurality of cell strings including a first cell string, the first cell string including a string selection transistor, a first dummy cell, a plurality of nonvolatile memory cells, a second dummy cell and a ground selection transistor that are serially connected in order and are stacked on or above a substrate in a direction that is perpendicular to the substrate, the first dummy cell being adjacent to the string selection transistor, the ground selection transistor being adjacent to the second dummy cell; a string select line connected the string selection transistor; a ground select line connected the ground selection transistor; a plurality of main word lines connected to the plurality of nonvolatile memory cells respectively; a first dummy word line connected to the first dummy cell; and a second dummy word line connected to the second dummy cell; wherein a first separation length between the string select line and the first dummy word line is different from a second separation length between the ground select line and the second dummy word line.