NONVOLATILE MEMORY AND PROGRAMMING METHOD OF SAME

摘要

In a program operation a plurality of memory cells are programmed depending on data stored in first and second data latches. Verification read operations are performed for the plurality of memory cells using different verification voltages respectively corresponding to different program states and collecting verification read results of the verification read operations. The first data latches and the second data latches are updated depending on the collected verification read results.

主权项

1. A programming method for a nonvolatile memory including memory cells configured to store more than one data bit according to an erase state and a plurality of program states for write data provided to a page buffer circuit, the method comprising:
programming respective memory cells using data stored in corresponding first and second latches of the page buffer; performing verification read operations for the memory cells using different verification voltages respectively corresponding to the program states, and collecting verification read results for the verification read operations; and updating the first and second latches in response to the collected verification read results.