THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME

摘要

The present invention relates to a thin film transistor substrate having different types of thin film transistors arranged thereon and a display device using the same. A display device of the present invention comprises: a first semiconductor layer; a second semiconductor layer; a first gate electrode; a second gate electrode; an intermediate insulating film; a first source electrode; a first drain electrode; a second source electrode; and a second drain electrode. The first semiconductor layer is arranged in a first region on the substrate, has polycrystalline semiconductor material, and is defined as a first channel region, a first source region and a first drain region. The second semiconductor layer is arranged in a second region on the substrate, has oxide semiconductor material, and is defined as a second channel region, a second source region and a second drain region. The first gate electrode overlaps with the first channel region while having a first gate insulating film therebetween. The second gate electrode overlaps with the second channel region while having the first gate insulating film therebetween. The intermediate insulating film covers the first semiconductor layer, the second semiconductor layer, the first gate electrode and the second gate electrode. The first source electrode, the second source electrode and the second drain electrode are arranged on the intermediate insulating film.