发明名称 |
ALLOY WITH SELECTED ELECTRICAL CONDUCTIVITY AND ATOMIC DISORDER, PROCESS FOR MAKING AND USING SAME |
摘要 |
A primary alloy includes: nickel; copper; zinc; an electrical conductivity from 5.2% International Annealed Copper Standard (IACS) to 5.6% IACS measured in accordance with ASTM E1004-09 (2009); and a disordered crystalline phase wherein atoms of the nickel, cooper, and zinc are randomly arranged in the disordered crystalline phase at room temperature in a post-annealed state. A process for making the primary alloy includes heating a secondary alloy to a first temperature that is greater than or equal to an annealing temperature to form an annealing alloy, the secondary alloy including a secondary phase; and quenching, by cooling the annealing alloy from the first temperature to a second temperature that is less than the annealing temperature, under a condition effective to form the primary alloy including the disordered crystalline phase, wherein the disordered crystalline phase is different than the secondary phase of the secondary alloy. |
申请公布号 |
US2016068940(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514940199 |
申请日期 |
2015.11.13 |
申请人 |
YING TONY;NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY |
发明人 |
LASS ERIC A.;STOUDT MARK R.;CAMPBELL CARELYN;YING TONY |
分类号 |
C22F1/08;B22D21/02;C22C9/04 |
主分类号 |
C22F1/08 |
代理机构 |
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代理人 |
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主权项 |
1. A primary alloy comprising:
nickel; copper; zinc; an electrical conductivity from 5.2% International Annealed Copper Standard (IACS) to 5.6% IACS measured in accordance with ASTM E1004-09 (2009); and a disordered crystalline phase wherein atoms of the nickel, cooper, and zinc are randomly arranged in the disordered crystalline phase at room temperature in a post-annealed state. |
地址 |
WASHINGTON DC US |