发明名称 METHOD FOR MOUNTING POWER SEMICONDUCTOR ELEMENT
摘要 FIELD: radio engineering.SUBSTANCE: invention can be used for production of radioelectronic devices. When mounting a power semiconductor element containing housing, heat-removing base connected to housing, at least one crystal, located in housing on heat-removing base, and outputs for transfer of high-frequency signal, first heat-removing base in area, maximally close to said at least one crystal, electrically and mechanically connected to grounding surface, at least one intermediate printed circuit board, having thickness to provide for its elastic deformation. Outputs for transfer of high-frequency signal are electrically connected with flat conductors arranged on its opposite surface to make matched sections of signal transmission. Method includes electrically and mechanically connecting said at least one intermediate printed-circuit board with main printed circuit board.EFFECT: technical result is providing optimum matching of input and output impedances, reduction of incidental reactive component, higher maximum output power for electronic device.4 cl, 10 dwg
申请公布号 RU2576666(C1) 申请公布日期 2016.03.10
申请号 RU20140135015 申请日期 2014.08.28
申请人 PUBLICHNOE AKTSIONERNOE OBSHCHESTVO "RADIOFIZIKA" 发明人 LEVITAN BORIS ARKADEVICH;KUZIN ALEKSANDR ALEKSANDROVICH;TOPCHIEV SERGEJ ALEKSANDROVICH;RADCHENKO VALERIJ PETROVICH;DOMINJUK JAROSLAV VASILEVICH;TUSHNOV PETR ANATOLEVICH;BERDYEV VALERIJ SAKHATKULIEVICH;KOLJUSHEV ALEKSEJ VLADIMIROVICH;MITROFANOV MAKSIM MIKHAJLOVICH;KOSTIN DMITRIJ JUREVICH;ASTAFEV ALEKSEJ ARNOLDOVICH
分类号 H05K3/34 主分类号 H05K3/34
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