SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, PROGRAM, AND RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To improve controllability of a composition in a film when forming the film containing a predetermined element, carbon and nitrogen.SOLUTION: A semiconductor device manufacturing method comprises a process of forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing, predetermined times, a cycle including: a step of supplying first process gas containing a predetermined element and a halogen element to the substrate; a step of supplying second process gas composed of three elements of carbon, nitrogen and hydrogen to the substrate; and a step of supplying carbon-containing third process gas to the substrate.SELECTED DRAWING: Figure 4