SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

According to one embodiment, a semiconductor memory device includes a lower electrode, an MTJ element, a cap layer and an upper electrode. The lower electrode is provided above a semiconductor substrate. The MTJ element is provided above the lower electrode. The cap layer is provided above the MTJ element and is oxygen-free. The upper electrode is connected to the cap layer.

主权项

1. A semiconductor memory device comprising:
a lower electrode above a semiconductor substrate; a magnetic tunnel junction (MTJ) element above the lower electrode; an oxygen-free cap layer above the MTJ element; and an upper electrode connected to the cap layer.