发明名称 |
LIGHT EMITTING DEVICE UTILIZING SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME |
摘要 |
An LED light emitting apparatus 1 includes a base substrate 2, a blue LED chip 3, a circuit pattern 4, a transmissive protection layer 5, a first fluorescent layer 6, and a second fluorescent layer 7. |
申请公布号 |
US2016072026(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201314427512 |
申请日期 |
2013.06.12 |
申请人 |
NS MATERIALS CORP. |
发明人 |
Kanaumi Eiichi |
分类号 |
H01L33/50;H01L33/54 |
主分类号 |
H01L33/50 |
代理机构 |
|
代理人 |
|
主权项 |
1. A light emitting device comprising:
a base substrate in which a predetermined circuit pattern is provided; a light emitting element provided on the base substrate and electrically connected to the circuit pattern; a first layer sealing portion formed in at least a part on the light emitting element, the first layer sealing portion through which light emitted from the light emitting element is transmittable; and a second layer sealing portion formed in at least a part on the first layer sealing portion, the second layer sealing portion having at least one kind of semiconductor quantum dots. |
地址 |
Fukuoka JP |