SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE

摘要

A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm.

主权项

1. A method for manufacturing a semiconductor light emitting device, the method comprising:
growing a semiconductor layer on a substrate made of GaAs; attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin; removing a part of the substrate by etching so that a thickness of the substrate is reduced down to approximately 1 μm; and after the etching, forming a metallic electrode on the etched surface of the substrate in a state where the temporary supporting substrate is still attached to the semiconductor layer.