METHOD FOR FABRICATING THIN FILM TRANSISTOR AND APPARATUS THEREOF

摘要

A method for fabricating a thin film transistor (TFT) is provided, and the method includes following steps. A gate and an insulation layer are sequentially formed on a substrate. A source electrode and a drain electrode are formed on the insulation layer. A solution type metal oxide precursor is coated on the insulation layer above the gate. A gas is provided, and the gas does not react with the solution type metal oxide precursor. An illumination process is performed on the solution type metal oxide precursor, so as to form a metal oxide semiconductor material through a photo cross-linking reaction of the solution type metal oxide precursor.

主权项

1. A method for fabricating a thin film transistor, the method comprising:
sequentially forming a gate and an insulation layer on a substrate; forming a source electrode and a drain electrode on the insulation layer; coating a solution type metal oxide precursor on the insulation layer above the gate; providing a gas, wherein the gas does not react with the solution type metal oxide precursor; and performing an illumination process on the solution type metal oxide precursor, so as to form a metal oxide semiconductor material through a photo cross-linking reaction of the solution type metal oxide precursor.