发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source. |
申请公布号 |
US2016071955(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514946035 |
申请日期 |
2015.11.19 |
申请人 |
SK hynix Inc. |
发明人 |
SIM Joon Seop |
分类号 |
H01L29/66;H01L21/265;H01L27/24;H01L21/306;H01L29/423;H01L29/08 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor integrated circuit apparatus, the method comprising:
forming an active island by etching a semiconductor substrate by a predetermined depth; forming a gate region by etching a predetermined portion of the active island; forming a first impurity region in the active island by implanting a first impurity into the active island; forming a gate by burying a conductive material in the gate region; forming a current blocking layer by implanting an impurity having substantially the same conductivity as the first impurity region into lower portions of both sides of the gate; and forming a source and a drain by implanting an impurity having an opposite conductivity to the first impurity region above the current blocking layer. |
地址 |
Gyeonggi-do KR |