| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers separately stacked each other; a plurality of columnar sections provided in the stacked body and extending in a stacking direction of the stacked body; and a first insulating section separating the stacked body. The respective columnar sections include a semiconductor body extending in the stacking direction; and a charge storage film provided between the semiconductor body and the plurality of electrode layers. The first insulating section includes a first air gap. |
| 申请公布号 |
US2016071926(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514641051 |
申请日期 |
2015.03.06 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KITAZAKI Soichirou;Sato Mitsuru;Ishiduki Megumi |
| 分类号 |
H01L29/06;H01L29/51;H01L21/3213;H01L29/423;H01L27/115;H01L21/28;H01L29/792;H01L29/66;H01L29/788;H01L21/02 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a stacked body including a plurality of electrode layers separately stacked each other; a plurality of columnar sections provided in the stacked body and extending in a stacking direction of the stacked body; and a first insulating section separating the stacked body, the respective columnar sections including:
a semiconductor body extending in the stacking direction; anda charge storage film provided between the semiconductor body and the plurality of electrode layers, and the first insulating section including a first air gap. |
| 地址 |
Minato-ku JP |
