SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of inter-layer insulating layers each provided between the plurality of electrode layers; and a columnar portion penetrating the stacked body and extending in a stacking direction of the stacked body. The columnar portion includes a channel body extending in the stacking direction; and a charge storage film provided between the channel body and each of the electrode layers. Each of the electrode layers includes an edge portion provided closer on a central axis side of the columnar portion than the inter-layer insulating layers. The charge storage film covers the edge portion of each of the electrode layers and separated from each other in the stacking direction.

主权项

1. A semiconductor memory device comprising:
a stacked body including a plurality of electrode layers separately stacked each other; a semiconductor body having an end portion provided between the plurality of electrode layers, the semiconductor body provided in the stacked body and extending in a stacking direction of the stacked body; and a charge storage film provided between the semiconductor body and the plurality of electrode layers and separated via the end portion of the semiconductor body.