| 主权项 |
1. A semiconductor device comprising:
a semiconductor body of a first conductivity type; a doped drain region of a second conductivity type disposed at a surface of the semiconductor body, the second conductivity type opposite to the first conductivity type; a doped source region of the second conductivity type disposed at the surface of the semiconductor body and laterally spaced from the doped drain region by a region of the first conductivity type; a gate, at least a portion of which insulatively overlies the region of the first conductivity type, wherein the gate further comprises a region of the second conductivity type adjacent to the doped source region and the doped drain region, wherein the region of the second conductivity type forms a second diode region, a region of the first conductivity type disposed adjacent to the region of the second conductivity type, wherein the region of the first conductivity type forms a first diode region, a second region of the second conductivity type disposed adjacent to the region of the first conductivity type, and forming a third diode region, wherein the interface between the first diode region and the third diode region forms a second semiconductor junction; a signal pad disposed on the semiconductor body, wherein the pad is coupled to the doped drain region; and a diode coupled between the gate and source, wherein the diode comprises the first diode region of the first conductivity type and the second diode region of the second conductivity type, wherein an interface between the first and second diode regions forms a first semiconductor junction, and wherein the first diode region is coupled to the doped source region and the second diode region is coupled to the gate, wherein the semiconductor device is a electrostatic discharge (ESD) protection device. |
