| 发明名称 |
FILM FORMING METHOD AND FILM FORMING APPARATUS |
| 摘要 |
There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece. |
| 申请公布号 |
US2016071728(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514844193 |
申请日期 |
2015.09.03 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TAKAGI Satoshi;TAKAHASHI Kazuya;MURAKAMI Hiroki;SUZUKI Daisuke |
| 分类号 |
H01L21/02;C23C16/44;C23C16/52;C30B29/52;C30B1/04;C30B29/06;C30B29/08;C23C16/455;C30B1/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a film on a surface to be processed of a workpiece, the method comprising:
accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece. |
| 地址 |
Tokyo JP |
