发明名称 BUS CIRCUITS FOR MEMORY DEVICES
摘要 Embodiments of bus circuits and related techniques are disclosed herein. In some embodiments, a bus circuit may include: a source follower arrangement, including a first transistor and a second transistor, coupled between a supply voltage and an access line of a memory cell, wherein the first transistor and the second transistor each have a gate terminal and wherein the access line is a bit line or a word line; a capacitor having a first terminal coupled to the gate terminal of the first transistor and having a second terminal coupled to a reference voltage; and a switch coupled between the first terminal of the capacitor and a voltage regulator. Other embodiments may be disclosed and/or claimed.
申请公布号 WO2016036441(A2) 申请公布日期 2016.03.10
申请号 WO2015US40791 申请日期 2015.07.16
申请人 INTEL CORPORATION 发明人 IRIZARRY, NICOLAS L.;SRINIVASAN, BALAJI
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